Magnetic, thermodynamic, and transport characterization of Na_0.75CoO₂ single crystalsSALES, B. C; JIN, R; AFFHOLTER, K. A et al.Physical review B. Condensed matter and materials physics. 2004, Vol 70, Num 17, pp 174419.1-174419.9, issn 1098-0121Article

Electronic carrier mobilities of BaTiO₃YOO, H.-I; SONG, C.-R; LEE, D.-K et al.Journal of the European Ceramic Society. 2004, Vol 24, Num 6, pp 1259-1263, issn 0955-2219, 5 p.Conference Paper

III-V semiconductor heterostructures : physics and devicesCai, Will Z.2003, isbn 81-7736-170-8, 355 p., isbn 81-7736-170-8Book

Structural and electrical properties of porous silicon with rf-sputtered Cu filmsANSARI, Z. A; HONG, Kwangpyo; LEE, Chongmu et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 90, Num 1-2, pp 103-109, issn 0921-5107Article

Hot-electron energy dissipation and inter-electron collisions in GaN-WZZUBKUTE, Tatiana; MATULIONIS, Arvydas.Semiconductor science and technology. 2002, Vol 17, Num 11, pp 1144-1148, issn 0268-1242, 5 p.Article

Containing papers presented at the Ninth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP-IX), Rimini, Italy, 24-28th September 2001FRIGERI, C.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 91-92, issn 0921-5107Conference Proceedings

Influence of electronic structure of CeSbNi_0.15 on its optical conductivityHONG, S. O; MIN, B. H; LEE, H. J et al.Physica. B, Condensed matter. 2002, Vol 312-13, pp 251-252, issn 0921-4526Conference Paper

Phase separation, charge ordering and electron transport in manganitesKAGAN, M. Yu; KUGEL, K. I; KHOMSKII, D. I et al.Physica. C. Superconductivity and its applications. 2001, Vol 364-65, pp 643-646Conference Paper

A simulation study on the effect of channel thickness on the characteristics of Ga_0.52In_0.48P/In_0.2Ga_0.8As/Ga_0.52In_0.48P DH-pHEMTYOON, S. F; KAM, A. H. T; ZHENG, H. Q et al.Microelectronics journal. 2000, Vol 31, Num 8, pp 667-676, issn 0959-8324Article

High-temperature effects on the velocity overshoot of hot electrons in 6H- and 3C-SiCBEZERRA, E. F; CAETANO, E. W. S; FREIRE, V. N et al.Semiconductor science and technology. 1999, Vol 14, Num 11, pp 1007-1011, issn 0268-1242Article

Reversible changes of properties of pure CdTe by annealing and agingKVIT, A. V; KLEVKOV, YU. V; OKTYABRSKY, S. R et al.Semiconductor science and technology. 1994, Vol 9, Num 10, pp 1805-1809, issn 0268-1242Article

Effects of deposition parameters on the structure and properties of RF sputtered boron nitrideBANERJEE, P. K; CHATTERJEE, B; KIM, J. S et al.Physica status solidi. A. Applied research. 1993, Vol 140, Num 1, pp 145-161, issn 0031-8965Article

The role of disorder on charge transport in molecularly doped polymers and related materialsBORSENBERGER, P. M; MAGIN, E. H; VAN DER AUWERAER, M et al.Physica status solidi. A. Applied research. 1993, Vol 140, Num 1, pp 9-47, issn 0031-8965Article

Influence of carbon ion energy on properties of highly tetrahedral diamond-like caronVEERASAMY, V. S; AMARATUNGA, G. A. J; MILNE, W. I et al.Journal of non-crystalline solids. 1993, Vol 164-66, pp 1111-1114, issn 0022-3093, 2Conference Paper

Ion-conducting amorphous semiconductor Ag-As-STANAKA, K.Journal of non-crystalline solids. 1993, Vol 164-66, pp 1179-1182, issn 0022-3093, 2Conference Paper

Effects of As flux on Si δ-doped GaAsSHIH, Y. C. A; NEIKIRK, D. P; STREETMAN, B. G et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1993, Vol 11, Num 3, pp 905-907, issn 1071-1023Conference Paper

Phonon anomalies and charge dynamics in Fe_1-xCu_xCr₂S₄ single crystalsRUDOLF, T; PUCHER, K; MAYR, F et al.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 1, pp 014450.1-14450.7, issn 1098-0121Article

HgCdMnZnTe: new material for IR photoelectronicsGORBATYUK, I. M; OSTAPOV, S. E; RARENKO, I. M et al.Journal of alloys and compounds. 2004, Vol 371, pp 114-117, issn 0925-8388, 4 p.Conference Paper

Current-limiting property of Cu/cupric oxide/Cu sandwich structureSERIN, Necmi; SERIN, Tülay; KARADENIZ, Serdar et al.Semiconductor science and technology. 2002, Vol 17, Num 1, pp 60-64, issn 0268-1242Article

Magnetic-impurity conductivity oscillations in semiconductors with a sharply anisotropic effective mass of charge carriersANDREEV, S. P; PAVLOVA, T. V.Laser physics. 2001, Vol 11, Num 12, pp 1357-1364, issn 1054-660XArticle

Electrical properties of boron nitride matrix composites: I, analysis of McLachlan equation and modeling of the conductivity of boron nitride-boron carbide and boron Nitride-silicon carbide compositesRUNYAN, Julie; GERHARDT, Rosario A; RUH, Robert et al.Journal of the American Ceramic Society. 2001, Vol 84, Num 7, pp 1490-1496, issn 0002-7820Conference Paper

Analytical functions for the dc and ac conductivity of conductor-insulator compositesMCLACHLAN, David S.Journal of electroceramics. 2000, Vol 5, Num 2, pp 93-110, issn 1385-3449Article

Conference on The Physics and Chemistry of Conducting LiquidsJournal of physics. Condensed matter (Print). 1997, Vol 9, Num 13, pp 2683-2730, issn 0953-8984Conference Proceedings

Quantification of electrical deactivation by triply negative charged Ga vacancies in highly doped thin GaAs layersMATSUSHITA, S; INOUE, D; MATSUMURA, K et al.Japanese journal of applied physics. 1997, Vol 36, Num 3B, pp 1698-1702, issn 0021-4922, 1Conference Paper

Unified view on conductivity and specific heat in DCNQI-Cu systemsYAMADA, K; KATO, M; NAKANO, M et al.Journal of physics. Condensed matter (Print). 1995, Vol 7, Num 9, pp 1807-1819, issn 0953-8984Article